NTP5864N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NTP5864N
Power MOSFET
60 V, 63 A, 12.4 mW
Features
• Low R_DS(on)
• High Current Capability
• Avalanche Energy Specified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
V_DSS
60
V
Gate−to−Source Voltage − Continuous
V_GS
±20
V
Gate−to−Source Voltage −
Non−Repetitive (t_p = 10 ms)
V_GS
±30
V
Continuous Drain
Steady ^TC ^{= 25°C}
I_D
Current − R_qJC (Note 1) _{State TC = 100°C}
63
A
45
Power Dissipation − _Steady T_C = 25°C
P_D
R_qJC (Note 1)
State _{TC = 100°C}
107
W
54
Pulsed Drain Current
t_p = 10 ms
I_DM
252
A
Operating Junction and Storage Temperature
T_J,
−55 to _°C
T_STG
175
Source Current (Body Diode) Pulsed
I_S
63
A
Single Pulse Drain−to Source Avalanche
Energy − (L = 0.1 mH)
EAS
IAS
80
mJ
40
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Case (Drain) − Steady State
(Note 1)
R_θJC
1.4 °C/W
Junction−to−Ambient − Steady State (Note 1)
R_θJA
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
33 °C/W
www.onsemi.com
V_(BR)DSS
60 V
R_DS(ON) MAX
12.4 mΩ @ 10 V
I_D MAX
(Note 1)
63 A
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
TO−220AB
CASE 221A
STYLE 5
NTP5864NG
AYWW
1
2
3
A
Y
WW
G
1
Gate
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
Device
Package
Shipping
NTP5864NG
TO−220
(Pb−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 1
Publication Order Number:
NTP5864N/D