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NTP5863NG Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET
NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
Continuous Drain
Current
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
Steady TC = 25°C
State
VDSS
VGS
VGS
ID
PD
60
$20
30
97
68
150
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
TJ, Tstg
383
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH, IL(pk) = 56 A)
Peak Diode Recovery (dV/dt)
IS
97
EAS
157
dV/dt
4.1
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
TL
260
Unit
V
V
V
A
W
A
°C
A
mJ
V/ns
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
1.0 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
36
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
7.8 mW @ 10 V
ID MAX
97 A
D
G
S
N−CHANNEL MOSFET
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
NTP
5863NG
AYWW
1
Gate
3
Source
2
Drain
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
July, 2011 − Rev. 2
Publication Order Number:
NTP5863N/D
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