NTP52N10 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 52 Amps, 100 Volts

NTP52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement Mode TO−220
Features
• Source−to−Drain Diode Recovery Time comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• I_DSS and R_DS(on) Specified at Elevated Temperature
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Source Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_pv10 ms)
Drain − Continuous @ T_A 25°C
− Continuous @ T_A 100°C
− Pulsed (Note 1.)
Total Power Dissipation @ T_A 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
100
100
"20
"40
52
40
156
178
1.43
Operating and Storage Temperature Range T_J, T_stg −55 to
+150
Single Drain−to−Source Avalanche Energy
E_AS
800
− Starting T_J = 25°C
(V_DD = 50 V, V_GS = 10 Vdc,
I_L(pk) = 40 A, L = 1.0 mH, R_G = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R_θJC
R_θJA
0.7
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from case for 10 seconds
1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
52 AMPERES
100 VOLTS
30 mΩ @ V_GS = 10 V
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
NTP52N10
LLYWW
1
3
Gate
Source
2
Drain
NTP52N10 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP52N10
TO−220AB
50 Units/Rail
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 2
Publication Order Number:
NTP52N10/D