NTP4804N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NTP4804N
Power MOSFET
30 V, 133 A, Single N−Channel, TO−220
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices*
Applications
• AC–DC Converters
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJC
Steady
State
Power Dissipation
RqJC
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_C = 25°C
T_C = 85°C
T_C = 25°C
V_DSS
V_GS
I_D
P_D
I_D
P_D
30
V
±20
V
21
A
13
3.0
W
133
A
85
120
W
Pulsed Drain
Current
Current Limited by
Package
T_A = 25°C,
t_p = 10 ms
T_A = 25°C
I_DM
350
A
I_DmaxPkg
45
A
Operating Junction and Storage
Temperature
T_J, T_STG −55 to °C
+175
Source Current (Body Diode)
Drain to Source DV/DT
I_S
dV/dt
78
A
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy T_J = 25°C, V_DD = 24 V, V_GS = 10 V,
I_L(pk) = 56 A, L = 0.3 mH, R_G = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T_L
474 mJ
260
°C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
I_D MAX
133 A
N−Channel
D
G
4
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
NTP4804NG
AYWW
1
Gate
2
Drain
3
Source
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
March, 2009 − Rev. 0
Publication Order Number:
NTP4804N/D