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NTP35N15 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 37 Amps, 150 Volts | |||
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NTP35N15
Preferred Device
Power MOSFET
37 Amps, 150 Volts
NâChannel TOâ220
Features
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Avalanche Energy Specified
⢠IDSS and RDS(on) Specified at Elevated Temperature
Typical Applications
⢠PWM Motor Controls
⢠Power Supplies
⢠Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
DrainâtoâSource Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage
â Continuous
â NonâRepetitive (tpv10 ms)
Drain Current
â Continuous @ TA 25°C
â Continuous @ TA 100°C
â Pulsed (Note 1.)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
150
150
"20
"40
37
23
111
178
1.43
Vdc
Vdc
Vdc
Adc
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg â 55 to °C
+150
Single DrainâtoâSource Avalanche Energy â
EAS
Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL(pk) = 21.6 A, L = 3.0 mH, RG = 25 â¦)
Thermal Resistance
â JunctionâtoâCase
â JunctionâtoâAmbient
RθJC
RθJA
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8â³ from case for 10 seconds
1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
700 mJ
°C/W
0.7
62.5
260
°C
http://onsemi.com
37 AMPERES
150 VOLTS
50 m⦠@ VGS = 10 V
NâChannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TOâ220AB
CASE 221A
STYLE 5
NTP35N15
LLYWW
1
Gate
3
Source
2
Drain
NTP35N15 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP35N15
TOâ220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 â Rev. 2
Publication Order Number:
NTP35N15/D
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