NTP30N20 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 30 Amps, 200 Volts

NTP30N20
Preferred Device
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode TO−220
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• I_DSS and R_DS(on) Specified at Elevated Temperature
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_pv10 ms)
Drain Current
− Continuous @ T_A 25°C
− Continuous @ T_A 100°C
− Pulsed (Note 1)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
200
200
"30
"40
30
22
90
214
1.43
Vdc
Vdc
Vdc
Adc
W
W/°C
Operating and Storage Temperature Range
T_J, T_stg − 55 to °C
+175
Single Drain−to−Source Avalanche Energy −
E_AS
Starting T_J = 25°C
(V_DD = 100 Vdc, V_GS = 10 Vdc,
I_L(pk) = 20 A, L = 3.0 mH, R_G = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R_θJC
R_θJA
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
mJ
450
°C/W
0.7
62.5
260
°C
http://onsemi.com
30 AMPERES
200 VOLTS
68 mΩ @ V_GS = 10 V (Typ)
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
NTP30N20
LLYWW
1
Gate
3
Source
2
Drain
NTP30N20 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N20
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 4
Publication Order Number:
NTP30N20/D