NTP30N06L Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 30 Amps, 60 Volts, Logic Level

NTP30N06L, NTB30N06L
Power MOSFET
30 Amps, 60 Volts, Logic Level
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS 60
VDGR 60
VGS
VGS
"15
"20
ID
30
ID
15
IDM
90
PD
88.2
0.59
Operating and Storage Temperature Range
TJ, Tstg –55 to
+175
Single Pulse Drain–to–Source Avalanche
EAS
101
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH
IL(pk) = 26 A, VDS = 60 Vdc)
Thermal Resistance
– Junction–to–Case
R_θJC 1.7
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
30 AMPERES
60 VOLTS
RDS(on) = 46 mΩ
N–Channel
D
G
4
S
4
12
1
2
3
TO–220AB
CASE 221A
STYLE 5
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx30N06L
LLYWW
1
Gate
3
Source
NTx30N06L
LLYWW
1
Gate
2
3
Drain _Source
2
Drain
NTx30N06L = Device Code
x
= P or B
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N06L
NTB30N06L
NTB30N06LT4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 – Rev. 1
Publication Order Number:
NTP30N06L/D