NTP27N06 Datasheet, PDF (1/12 Pages) ON Semiconductor – Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK

NTP27N06, NTB27N06
Power MOSFET
27 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
60
60
"20
"30
27
15
80
88.2
0.59
Operating and Storage Temperature Range TJ, Tstg –55 to
+175
Single Pulse Drain–to–Source Avalanche
EAS
109
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 0.3 mH, IL(pk) = 27 A,VDS = 60 Vdc)
Thermal Resistance – Junction–to–Case
R_θJC
1.7
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10 seconds
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
27 AMPERES
60 VOLTS
RDS(on) = 46 mΩ
N–Channel
D
G
4
S
4
12
3
1
2
3
TO–220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx27N06
LLYWW
1
Gate
3
Source
NTx27N06
LLYWW
12 3
Gate Drain Source
2
Drain
NTx27N06
x
LL
Y
WW
= Device Code
= B or P
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP27N06
NTB27N06
NTB27N06T4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
August, 2001 – Rev. 2
Publication Order Number:
NTP27N06/D