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NTP22N06L Datasheet, PDF (1/7 Pages) ON Semiconductor – N−Channel Power MOSFET
NTP22N06L, NTB22N06L
Power MOSFET
22 Amps, 60 Volts, Logic Level
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 μs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range
VDSS
60 Vdc
VDGR
60
Vdc
Vdc
VGS
"10
VGS
"20
ID
ID
IDM
PD
TJ, Tstg
22
10
66
60
0.4
−55 to
+175
Adc
Apk
W
W/°C
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
IL(pk) = 12 A, VDS = 60 Vdc, RG = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
EAS
72
mJ
RθJC
RθJA
°C/W
2.5
62.5
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
http://onsemi.com
22 AMPERES
60 VOLTS
RDS(on) = 65 mΩ
N−Channel
D
G
4
S
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx22N06L
LLYWW
1
Gate
3
Source
NTx22N06L
LLYWW
1
Gate
2
3
Drain Source
2
Drain
NTx22N06L = Device Code
x
= P or B
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP22N06L
TO−220AB
50 Units/Rail
NTB22N06L
NTB22N06LT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
NTP22N06L/D