NTP22N06 Datasheet, PDF (1/7 Pages) ON Semiconductor – N−Channel Enhancement−Mode Silicon Gate

NTP22N06, NTB22N06
Power MOSFET
22 Amps, 60 Volts
N−Channel TO−220 and D²PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 10 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_pv10 ms)
Drain Current
− Continuous @ T_A = 25°C
− Continuous @ T_A = 100°C
− Single Pulse (t_pv10 μs)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GS
I_D
I_D
I_DM
P_D
60
60
"20
"30
22
10
66
60
0.4
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 50 Vdc, V_GS = 10 Vdc, L = 1.0 mH,
V_DS = 60 Vdc, I_L(pk) = 12 A, RG = 25 Ω)
T_J, T_stg
E_AS
− 55
to
+175
72
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R_θJC
R_θJA
2.5
62.5
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T_L
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
22 AMPERES
60 VOLTS
R_DS(on) = 60 mΩ
N−Channel
D
G
4
S
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
12
3
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx22N06
LLYWW
1
Gate
3
Source
NTx22N06
LLYWW
1
Gate
2
3
Drain ^Source
2
Drain
NTx22N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP22N06
NTB22N06
NTB22N06T4
TO−220AB
D²PAK
D²PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
NTP22N06/D