NTP18N06L Datasheet, PDF (1/12 Pages) ON Semiconductor – Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK)

NTP18N06L, NTB18N06L
Power MOSFET
15 Amps, 60 Volts,
Logic Level
N−Channel TO−220 and D²PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 10 mW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_p v 10 ms)
Drain Current
− Continuous @ T_C = 25°C
− Continuous @ T_C = 100°C
− Single Pulse (t_p v 10 ms)
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
60 Vdc
60 Vdc
Vdc
"10
"20
I_D
15 Adc
I_D
8.0 Adc
I_DM
45
A_pk
P_D
48.4 Watts
0.32 W/°C
Operating and Storage Temperature Range
T_J, T_stg − 55 to °C
+175
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 5.0 Vdc, V_DS = 60 Vdc,
I_L(pk) = 11 A, L = 1.0 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
R_qJC
R_qJA
T_L
61 mJ
°C/W
3.1
72.5
260 °C
© Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 3
http://onsemi.com
15 AMPERES
60 VOLTS
R_DS(on) = 100 mW
N−Channel
D
G
S
1
2
3
4
TO−220AB
CASE 221A
STYLE 5
4
12
3
D²PAK
CASE 418AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx18N06L
LLYWW
NTx18N06L
LLYWW
1
Gate
3
Source
12 3
Gate Drain Source
2
Drain
NTx18N06L = Device Code
x
= B or P
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
Publication Order Number:
NTP18N06L/D