NTNS3C68NZ Datasheet, PDF (1/3 Pages) ON Semiconductor – Single N-Channel Small Signal MOSFET

NTNS3C68NZ
Product Preview
Small Signal MOSFET
12 V, 758 mA, Single N−Channel SOT−883
(XDFN3) 1.0 x 0.6 x 0.4 mm Package
Features
• Single N−Channel MOSFET
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
Extremely Thin Environments such as Portable Electronics
• Low R_DS(on) Solution in Ultra Small 1.0 x 0.6 mm Package
• 1.5 V Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Switch
• High Speed Interfacing
• Level Shift and Translate
• Optimized for Power Management in Ultra Portable Solutions
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 25°C
V_DSS
V_GS
I_D
P_D
12
V
±10
V
758
mA
547
898
156 mW
t ≤ 5 s T_A = 25°C
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
T_J,
T_STG
I_S
T_L
219
TBD mA
-55 to °C
150
TBD mA
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction-to-Ambient – Steady State (Note 1)
R_θJA
800 °C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
R_θJA
570
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm²), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. P1
www.onsemi.com
V_(BR)DSS
12 V
MOSFET
R_DS(on) MAX
0.160 W @ 4.5 V
0.173 W @ 3.7 V
0.182 W @ 3.3 V
0.220 W @ 2.5 V
0.440 W @ 1.8 V
I_D MAX
758 mA
N−Channel MOSFET
D (3)
G (1)
S (2)
3
21
SOT−883
(XDFN3)
CASE 506CB
MARKING
DIAGRAM
XX M
XX = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NTNS3C68NZT5G
Package
SOT−883
(Pb−Free)
Shipping^†
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTNS3C68NZ/D