NTNS3A91PZ Datasheet, PDF (1/3 Pages) ON Semiconductor – Small Signal MOSFET .20 V, .214 mA, Single P.Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package

NTNS3A91PZ
Advance Information
Small Signal MOSFET
−20 V, −214 mA, Single P−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
• Single P−Channel MOSFET
• Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
• Low R_DS(on) Solution in 0.62 x 0.62 mm Package
• 1.5 V Gate Voltage Rating
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 25°C
V_DSS
V_GS
I_D
P_D
−20
V
±8.0
V
−214 mA
−155
−277
125 mW
t ≤ 5 s T_A = 25°C
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
T_J,
T_STG
I_S
T_L
208
−643 mA
-55 to °C
150
−208 mA
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction-to-Ambient – Steady State (Note 1)
R_θJA
1000 °C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
R_θJA
600
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm²), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
V_(BR)DSS
−20 V
MOSFET
R_DS(on) MAX
1.6 W @ −4.5 V
2.4 W @ −2.5 V
3.3 W @ −1.8 V
4.5 W @ −1.5 V
I_D MAX
−214 mA
P−Channel MOSFET
D (3)
G (1)
S (2)
3
2
1
XLLGA3
CASE 713AA
MARKING
DIAGRAM
1
XM
X = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NTNS3A91PZT5G
Package
XLLGA3
(Pb−Free)
Shipping^†
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
June, 2012 − Rev. P2
Publication Order Number:
NTNS3A91PZ/D