NTND3184NZ Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual N-Channel Small Signal MOSFET

NTND3184NZ
Small Signal MOSFET
20 V, 200 mA, Dual N−Channel,
0.65 mm x 0.90 mm x 0.4 mm XLLGA−6
Package
Features
• Dual N−Channel MOSFET
• Offers a Low R_DS(ON) Solution in the Ultra Small 0.65 mm
x 0.90 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 25°C
V_DSS
V_GS
I_D
P_D
20
V
±8
V
200 mA
140
220
125 mW
tv5s
166
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
T_J,
T_STG
I_S
T_L
800 mA
−55 to °C
150
200 mA
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
www.onsemi.com
V_(BR)DSS
20 V
R_DS(ON) MAX
1.5 W @ 4.5 V
2.0 W @ 2.5 V
3.0 W @ 1.8 V
4.5 W @ 1.5 V
D1
I_D Max
200 mA
D2
G1
G2
N−Channel
S1
MOSFET
S2
XLLGA6
Case 713AC
PINOUT DIAGRAM
6 D1
S1 1
5 G2
G1 2
4 S2
D2 3
(Bottom View)
MARKING DIAGRAM
AM
1
A
= Specific Device Code
M
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 1
Publication Order Number:
NTND3184NZ/D