NTND31200PZ Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual P-Channel Small Signal MOSFET

NTND31200PZ
Small Signal MOSFET
−20 V, −127 mA, Dual P−Channel,
0.65 mm x 0.90 mm x 0.4 mm XLLGA6
Package
Features
• Dual P−Channel MOSFET
• Offers a Low R_DS(ON) Solution in the Ultra Small
0.65 mm × 0.90 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 25°C
V_DSS
V_GS
I_D
P_D
−20 V
±8
V
−127 mA
−91
−146
125 mW
t≤5s
166
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
T_J,
T_STG
I_S
T_L
−488 mA
−55 to °C
150
−200 mA
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
www.onsemi.com
V_(BR)DSS
−20 V
R_DS(ON) MAX
5.0 W @ −4.5 V
6.0 W @ −2.5 V
7.0 W @ −1.8 V
10.0 W @ −1.5 V
I_D Max
−127 mA
P−Channel MOSFET
S1
S2
G1
G2
D1
D2
XLLGA6
Case 713AC
PINOUT DIAGRAM
6 D1
S1 1
5 G2
G1 2
4 S2
D2 3
(Bottom View)
MARKING DIAGRAM
EM
1
E
= Specific Device Code
M
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 0
Publication Order Number:
NTND31200PZ/D