NTMSD3P303R2_06 Datasheet, PDF (1/9 Pages) ON Semiconductor – P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

NTMSD3P303R2
FETKY™
P−Channel Enhancement−Mode
Power MOSFET and Schottky Diode
Dual SO−8 Package
Features
• High Efficiency Components in a Single SO−8 Package
• High Density Power MOSFET with Low R_DS(on),
Schottky Diode with Low V_F
• Independent Pin−Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
• Less Component Placement for Board Space Savings
• SO−8 Surface Mount Package,
Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = −30 Vdc, V_GS = −4.5 Vdc,
Peak I_L = −7.5 Apk, L = 5 mH, R_G = 25 W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
V_DSS
V_GS
R_qJA
P_D
I_D
I_D
I_DM
R_qJA
P_D
I_D
I_D
I_DM
R_qJA
P_D
I_D
I_D
I_DM
T_J, T_stg
E_AS
T_L
−30
V
"20
V
171
0.73
−2.34
−1.87
−8.0
°C/W
W
A
A
A
100
1.25
−3.05
−2.44
−12
°C/W
W
A
A
A
62.5
2.0
−3.86
−3.10
−15
−55 to
+150
140
°C/W
W
A
A
A
°C
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2″ square FR−4 Board
(1in sq, 2 oz Cu 0.06″ thick single sided), Steady State.
3. Mounted onto a 2″ square FR−4 Board
(1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
MOSFET
−3.05 AMPERES
−30 VOLTS
0.085 W @ V_GS = −10 V
SCHOTTKY DIODE
3.0 AMPERES
30 VOLTS
420 mV @ I_F = 3.0 A
1
8
A
C
2
7
A
C
6
S
3
D
G
4
5
D
(TOP VIEW)
8
1
SO−8
CASE 751
STYLE 18
MARKING DIAGRAM &
PIN ASSIGNMENT
C C DD
8
E3P303
AYWW G
G
1
A A SG
E3P303 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMSD3P303R2 SO−8 2500/Tape & Reel
NTMSD3P303R2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 2
Publication Order Number:
NTMSD3P303R2/D