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NTMSD3P303R2 Datasheet, PDF (1/10 Pages) ON Semiconductor – P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package | |||
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NTMSD3P303R2
FETKYâ¢
PâChannel EnhancementâMode
Power MOSFET and Schottky Diode
Dual SOâ8 Package
Features
⢠High Efficiency Components in a Single SOâ8 Package
⢠High Density Power MOSFET with Low RDS(on),
Schottky Diode with Low VF
⢠Independent PinâOuts for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
⢠Less Component Placement for Board Space Savings
⢠SOâ8 Surface Mount Package,
Mounting Information for SOâ8 Package Provided
Applications
⢠DCâDC Converters
⢠Low Voltage Motor Control
⢠Power Management in Portable and BatteryâPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage â Continuous
Thermal Resistance â
JunctionâtoâAmbient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4.)
Thermal Resistance â
JunctionâtoâAmbient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4.)
Thermal Resistance â
JunctionâtoâAmbient (Note 3.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4.)
Operating and Storage
Temperature Range
VDSS
VGS
RθJA
PD
ID
ID
IDM
RθJA
PD
ID
ID
IDM
RθJA
PD
ID
ID
IDM
TJ, Tstg
â30
V
"20
V
171
0.73
â2.34
â1.87
â8.0
°C/W
W
A
A
A
100
1.25
â3.05
â2.44
â12
°C/W
W
A
A
A
62.5
2.0
â3.86
â3.10
â15
â55 to
+150
°C/W
W
A
A
A
°C
Single Pulse DrainâtoâSource Avalanche
EAS
Energy â Starting TJ = 25°C (VDD =
â30 Vdc, VGS = â4.5 Vdc, Peak IL =
â7.5 Apk, L = 5 mH, RG = 25 â¦)
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8â³ from case for 10 seconds
140
mJ
260
°C
1. Minimum FRâ4 or Gâ10 PCB, Steady State.
2. Mounted onto a 2â³ square FRâ4 Board (1â³ sq. 2 oz Cu 0.06â³ thick single sided),
Steady State.
3. Mounted onto a 2â³ square FRâ4 Board (1â³ sq. 2 oz Cu 0.06â³ thick single sided),
t ⤠10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
MOSFET
â3.05 AMPERES
â30 VOLTS
0.085 W @ VGS = â10 V
SCHOTTKY DIODE
3.0 AMPERES
30 VOLTS
420 mV @ IF = 3.0 A
8
1
SOâ8
CASE 751
STYLE 18
A
1
8
C
A
2
7
C
S
3
6
D
G
D
4
5
(TOP VIEW)
MARKING DIAGRAM
& PIN ASSIGNMENTS
Anode
Anode
Source
Gate
1
8 Cathode
2
7
3
E3P303
LYWW
Cathode
6
Drain
4
5
Drain
(Top View)
E3P303 = Device Code
L
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shippingâ
NTMSD3P303R2 SOâ8 2500/Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 â Rev. 1
Publication Order Number:
NTMSD3P303R2/D
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