NTMSD3P102R2_06 Datasheet, PDF (1/9 Pages) ON Semiconductor – P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

NTMSD3P102R2
FETKY™
P−Channel Enhancement−Mode
Power MOSFET and Schottky Diode
Dual SO−8 Package
Features
• High Efficiency Components in a Single SO−8 Package
• High Density Power MOSFET with Low R_DS(on),
Schottky Diode with Low V_F
• Independent Pin−Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
• Less Component Placement for Board Space Savings
• SO−8 Surface Mount Package,
Mounting Information for SO−8 Package Provided
• Pb−Free Packages are Available
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted).
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
V_DSS
−20
V
V_GS
"20
V
R_qJA
P_D
I_D
I_D
I_DM
171
0.73
−2.34
−1.87
−8.0
°C/W
W
A
A
A
R_qJA
P_D
I_D
I_D
I_DM
100
1.25
−3.05
−2.44
−12
°C/W
W
A
A
A
R_qJA
P_D
I_D
I_D
I_DM
T_J, T_stg
62.5
2.0
−3.86
−3.10
−15
−55 to
+150
°C/W
W
A
A
A
°C
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = −20 Vdc, V_GS = −4.5 Vdc,
Peak I_L = −7.5 Apk, L = 5 mH, R_G = 25 W)
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
140
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick
single−sided), Steady State.
3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single
sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 2
http://onsemi.com
MOSFET
−3.05 AMPERES
−20 VOLTS
0.085 W @ V_GS = −10 V
SCHOTTKY DIODE
1.0 AMPERE
20 VOLTS
470 mV @ I_F = 1.0 A
1
8
A
C
2
7
A
C
S
3
6
D
G
4
5
D
(TOP VIEW)
8
1
SO−8
CASE 751
STYLE 18
MARKING DIAGRAM &
PIN ASSIGNMENT
C C DD
8
E3P1xx
AYWW G
G
1
A A SG
E3P1
xx
A
Y
WW
G
= Device Code
= 02 or S
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMSD3P102R2
SO−8 2500/Tape & Reel
NTMSD3P102R2G SO−8 2500/Tape & Reel
(Pb−Free)
NTMSD3P102R2SG SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMSD3P102R2/D