NTMS5P02 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTMS5P02, NVMS5P02
Power MOSFET
-5.4 Amps, -20 Volts
P−Channel Enhancement−Mode
Single SOIC−8 Package
Features
• High Density Power MOSFET with Ultra Low R_DS(on)
Providing Higher Efficiency
• Miniature SOIC−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• I_DSS Specified at Elevated Temperature
• Drain−to−Source Avalanche Energy Specified
• Mounting Information for the SOIC−8 Package is Provided
• These Devices are Pb−Free and are RoHS Compliant
• NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
http://onsemi.com
V_DSS
−20 V
R_DS(ON) TYP
26 mW @ −4.5 V
I_D MAX
−5.4 A
Single P−Channel
D
G
8
1
SOIC−8
CASE 751
STYLE 13
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D D DD
8
E5P02x
AYWW G
G
1
NC S S G
E5P02 = Specific Device Code
x
= Blank or S
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMS5P02R2G
NVMS5P02R2G
SOIC−8 2500 / Tape & Reel
(Pb−Free)
SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2012
1
December, 2012 − Rev. 3
Publication Order Number:
NTMS5P02R2/D