NTMS4P01R2 Datasheet, PDF (1/8 Pages) ON Semiconductor – P−Channel Enhancement−Mode Power MOSFET

NTMS4P01R2
Power MOSFET
−4.5 Amps, −12 Volts
P−Channel Enhancement−Mode
Single SO−8 Package
Features
• High Density Power MOSFET with Ultra Low R_DS(on)
Providing Higher Efficiency
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• I_DSS Specified at Elevated Temperature
• Drain−to−Source Avalanche Energy Specified
• Mounting Information for the SO−8 Package is Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
V_DSS
−12 V
R_DS(ON) TYP
30 mΩ @ −4.5 V
I_D MAX
−4.5 A
Single P−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 13
MARKING DIAGRAM
& PIN ASSIGNMENT
1
N.C.
2
Source
3
Source
4
Gate
E4P01
LYWW
8
Drain
7
Drain
6
Drain
5
Drain
Top View
E4P01
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMS4P01R2
SO−8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
NTMS4P01R2/D