NTMS4916N Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 30 V, 11.6 A, N−Channel, SO−8 Low RDS(on) to Minimize Conduction Losses

NTMS4916N
Power MOSFET
30 V, 11.6 A, N−Channel, SO−8
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Optimized for 5 V, 12 V Gate Drives
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Printers
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20 V
Continuous Drain
Steady T_A = 25°C
I_D
Current R_qJA (Note 1)
State
T_A = 70°C
9.4
A
7.5
Power Dissipation R_qJA Steady T_A = 25°C
P_D
1.30 W
(Note 1)
State
Continuous Drain
Steady T_A = 25°C
I_D
Current R_qJA (Note 2)
State
T_A = 70°C
7.8
A
6.2
Power Dissipation R_qJA
(Note 2)
T_A = 25°C
P_D
0.89 W
Continuous Drain
Steady T_A = 25°C
I_D
Current R_qJA, t v 10 s State
(Note 1)
T_A = 70°C
11.6 A
9.3
Power Dissipation
Steady T_A = 25°C
R_qJA, t v 10 s(Note 1) State
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(T_J = 25°C, V_DD = 30 V, V_GS = 10 V,
I_L = 9 A_pk, L = 1.0 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
P_D
1.98 W
I_DM
145 A
T_J, −55 to °C
T_stg
150
I_S
2.5 A
E_AS
40.5 mJ
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
R_qJA
96 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
R_qJA
63
Junction−to−Foot (Drain)
R_qJF
24.5
Junction−to−Ambient – Steady State (Note 2)
R_qJA
141
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
9 mW @ 10 V
12 mW @ 4.5 V
I_D MAX
11.6 A
N−Channel
D
G
S
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4916N = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMS4916NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 0
Publication Order Number:
NTMS4916N/D