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NTMS4873NF Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 11.5 A, N−Channel, SO−8 | |||
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NTMS4873NF
Power MOSFET
30 V, 11.5 A, NâChannel, SOâ8
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Includes SyncFET Schottky Diode
⢠Optimized Gate Charge to Minimize Switching Losses
⢠SOICâ8 Surface Mount Package Saves Board Space
⢠This is a PbâFree Device
Applications
⢠Synchronous FET for DCâDC Converters
⢠Low Side Notebook NonâVCORE Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
8.9
A
TA = 70°C
7.2
TA = 25°C
PD
1.39 W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 70°C
7.1
A
5.7
Power Dissipation RqJA State TA = 25°C
PD
0.87 W
(Note 2)
Continuous Drain
Current RqJA, t v 10 s
(Note 1)
TA = 25°C
ID
TA = 70°C
11.5 A
9.2
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 11 Apk, L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
PD
2.31 W
IDM
56
A
TJ, â55 to °C
Tstg
150
IS
3.3 A
EAS
60.5 mJ
TL
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctionâtoâAmbient â Steady State (Note 1)
RqJA
89.9 °C/W
JunctionâtoâAmbient â t v 10 s (Note 1)
RqJA
54.2
JunctionâtoâFoot (Drain)
RqJF
35.6
JunctionâtoâAmbient â Steady State (Note 2)
RqJA
143
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqâin pad, 2 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
12 mW @ 10 V
15 mW @ 4.5 V
ID MAX
11.5 A
NâChannel
D
G
S
1
SOâ8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4873NF = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTMS4873NFR2G SOâ8 2500/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 â Rev. 1
Publication Order Number:
NTMS4873NF/D
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