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NTMS4840N Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8 | |||
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NTMS4840N
Power MOSFET
30 V, 7.5 A, Single NâChannel, SOICâ8
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠SOICâ8 Surface Mount Package Saves Board Space
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
⢠DCâDC Converters
⢠Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
30
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
ID
TA = 70°C
5.5
A
4.4
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
1.14 W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2) Steady TA = 70°C
Power Dissipation
State TA = 25°C
PD
RqJA (Note 2)
4.5
A
3.5
0.68 W
Continuous Drain
Current RqJA t < 10 s
(Note 1)
TA = 25°C
ID
TA = 70°C
7.5
A
6.0
Power Dissipation
RqJA t < 10 s (Note 1)
TA = 25°C
PD
1.95 W
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
IDM
38
A
Operating Junction and Storage Temperature TJ, TSTG â55 to °C
+150
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 7.5 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
EAS
2.0
A
28
mJ
TL
260
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
JunctionâtoâAmbient â Steady State (Note 1)
RqJA
110
JunctionâtoâAmbient â tâ¤10 s (Note 1)
JunctionâtoâFOOT (Drain)
RqJA
RqJF
64
°C/W
40
JunctionâtoâAmbient â Steady State (Note 2)
RqJA
183.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) Max
24 mW @ 10 V
36 mW @ 4.5 V
ID Max
7.5 A
NâChannel
D
G
1
SOâ8
CASE 751
STYLE 12
S
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
S4840 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
ORDERING INFORMATION
Device
Package
Shippingâ
NTMS4840NR2G SOICâ8 2500/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
September, 2009 â Rev. 1
Publication Order Number:
NTMS4840N/D
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