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NTMS4816N_13 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET | |||
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NTMS4816N
Power MOSFET
30 V, 11 A, NâChannel, SOâ8
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These Devices are PbâFree and are RoHS Compliant
Applications
⢠Disk Drives
⢠DCâDC Converters
⢠Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
30
V
GateâtoâSource Voltage
VGS
±20 V
Continuous Drain
Steady TA = 25°C
ID
Current RqJA (Note 1)
State
TA = 70°C
9.0
A
7.2
Power Dissipation RqJA Steady TA = 25°C
PD
1.37 W
(Note 1)
State
Continuous Drain
Steady TA = 25°C
ID
Current RqJA (Note 2)
State
TA = 70°C
6.8
A
5.4
Power Dissipation RqJA
(Note 2)
TA = 25°C
PD
0.78 W
Continuous Drain
Steady TA = 25°C
ID
Current RqJA, t v 10 s State
(Note 1)
TA = 70°C
11
A
8.8
Power Dissipation
Steady TA = 25°C
RqJA, t v 10 s(Note 1) State
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 12.5 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
PD
2.04 W
IDM
33
A
TJ, â55 to °C
Tstg
150
IS
2.7 A
EAS
78 mJ
TL
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctionâtoâAmbient â Steady State (Note 1)
RqJA
91.5 °C/W
JunctionâtoâAmbient â t v 10 s (Note 1)
RqJA
61.3
JunctionâtoâFoot (Drain)
RqJF
22.5
JunctionâtoâAmbient â Steady State (Note 2)
RqJA 159.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 â Rev. 2
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
10 mW @ 10 V
16 mW @ 4.5 V
ID MAX
11 A
NâChannel
D
G
S
1
SOâ8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4816N = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTMS4816NR2G SOâ8 2500 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4816N/D
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