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NTMS4816N Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 30 V, 11 A, N-Channel, SO-8 | |||
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NTMS4816N
Power MOSFET
30 V, 11 A, N-Channel, SO-8
Features
â¢ÄLow RDS(on) to Minimize Conduction Losses
â¢ÄLow Capacitance to Minimize Driver Losses
â¢ÄOptimized Gate Charge to Minimize Switching Losses
â¢ÄThis is a Pb-Free Device
Applications
â¢ÄDisk Drives
â¢ÄDC-DC Converters
â¢ÄPrinters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
±20 V
Continuous Drain
Steady TA = 25°C
ID
Current RqJA (Note 1)
State TA = 70°C
9.0 A
7.2
Power Dissipation RqJA Steady TA = 25°C
PD
1.37 W
(Note 1)
State
Continuous Drain
Steady TA = 25°C
ID
Current RqJA (Note 2)
State TA = 70°C
6.8 A
5.4
Power Dissipation RqJA
(Note 2)
TA = 25°C
PD
0.78 W
Continuous Drain
Steady TA = 25°C
ID
Current RqJA, t v 10 s State
(Note 1)
TA = 70°C
11
A
8.8
Power Dissipation
Steady TA = 25°C
RqJA, t v 10 s(Note 1) State
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 12.5 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
PD
2.04 W
IDM
33
A
TJ, -55 to °C
Tstg
150
IS
2.7 A
EAS
78 mJ
TL
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction-to-Ambient â Steady State (Note 1)
RqJA
91.5 °C/W
Junction-to-Ambient â t v 10 s (Note 1)
RqJA
61.3
Junction-to-Foot (Drain)
RqJF
22.5
Junction-to-Ambient â Steady State (Note 2)
RqJA 159.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
10 mW @ 10 V
16 mW @ 4.5 V
ID MAX
11 A
N-Channel
D
G
S
1
SO-8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
Source
Source
Gate
8
Drain
Drain
Drain
Drain
Top View
4816N = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTMS4816NR2G SO-8 2500/Tape & Reel
(Pb-Free)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
婀 Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 0
Publication Order Number:
NTMS4816N/D
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