NTMS4807N Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 30 V, 14.8 A, N-Channel, SO-8

NTMS4807N
Power MOSFET
30 V, 14.8 A, N-Channel, SO-8
Features
•ăLow R_DS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăThis is a Pb-Free Device
Applications
•ăDisk Drives
•ăDC-DC Converters
•ăPrinters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20 V
T_A = 25°C
I_D
12.2 A
T_A = 70°C
9.8
T_A = 25°C
P_D
1.55 W
Continuous Drain
T_A = 25°C
I_D
Current R_qJA (Note 2)
Steady ^{TA = 70°C}
9.1 A
7.3
Power Dissipation R_qJA ^State T_A = 25°C
P_D
0.86 W
(Note 2)
Continuous Drain
Current R_qJA, t v 10 s
(Note 1)
T_A = 25°C
I_D
14.8 A
T_A = 70°C
11.8
Power Dissipation
R_qJA, t v 10 s(Note 1)
T_A = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy
(T_J = 25°C, V_DD = 30 V, V_GS = 10 V,
I_L = 14 A_pk, L = 1.0 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
P_D
2.3 W
I_DM
50
A
T_J, -55 to °C
T_stg
150
I_S
2.9 A
E_AS
98 mJ
T_L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction-to-Ambient – Steady State (Note 1)
R_qJA
80.5 °C/W
Junction-to-Ambient – t v 10 s (Note 1)
R_qJA
54.9
Junction-to-Foot (Drain)
R_qJF
19.5
Junction-to-Ambient – Steady State (Note 2)
R_qJA
145
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
6.1 mW @ 10 V
7.5 mW @ 4.5 V
I_D MAX
14.8 A
N-Channel
D
G
S
1
SO-8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
Source
Source
Gate
8
Drain
Drain
Drain
Drain
Top View
4807N = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMS4807NR2G SO-8 2500/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 0
Publication Order Number:
NTMS4807N/D