NTMS4706N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8

NTMS4706N
Power MOSFET
30 V, 10.3 A, Single N−Channel, SO−8
Features
• Low R_DS(on)
• Low Gate Charge
• Standard SO−8 Single Package
• Pb−Free Package is Available
Applications
• Notebooks, Graphics Cards
• Synchronous Rectification
• High Side Switch
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20 V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State _{TA = 85°C}
8.6 A
6.2
t v 10 s T_A = 25°C
10.3
Power Dissipation
(Note 1)
Steady T_A = 25°C
P_D
State
1.5 W
t v 10 s
2.2
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State _{TA = 85°C}
T_A = 25°C
P_D
6.4 A
4.6
0.83 W
Pulsed Drain Current
t_p = 10 ms
I_DM
31
A
Operating Junction and Storage Temperature
T_J, −55 to °C
T_stg
150
Source Current (Body Diode)
I_S
2.1 A
Single Pulse Drain−to−Source Avalanche Energy E_AS
(V_DD = 25 V, V_GS = 10 V, I_L Peak = 7.5 A,
L = 10 mH, R_G = 25 W)
150 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
R_qJA
83.5 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
R_qJA
58
Junction−to−Ambient – Steady State (Note 2)
R_qJA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
R_DS(ON) TYP
30 V
9.0 mW @ 10 V
11.4 mW @ 4.5 V
I_D MAX
(Note 1)
10.3 A
N−Channel
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1
SO−8
CASE 751
STYLE 12
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4706N = Device Code
A
= Assembly Location
L
= WaferLot
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMS4706NR2
SO−8 2500/Tape & Reel
NTMS4706NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 3
Publication Order Number:
NTMS4706N/D