NTMS4700N Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NTMS4700N
Power MOSFET
30 V, 14.5 A, Single N−Channel, SO−8
Features
• Ultra Low R_DS(on) (at 4.5 V_GS), Low Gate Resistance and Low Q_G
• Optimized for High Side Control Applications
• High Speed Switching Capability
• Pb−Free Package is Available
Applications
• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage − Continuous
V_GS
$20 V
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 70°C}
11.5 A
9.2
t v10 s T_A = 25°C
14.5
Power Dissipation
(Note 1)
Steady
P_D
State _{TA = 25°C}
t v10 s
1.56 W
2.5
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
Steady T_A = 70°C
State
T_A = 25°C
P_D
8.6
A
6.8
0.86 W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature
I_DM
40
A
T_J, T_stg −55 to °C
150
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V_DD = 25 V, V_GS = 10 V, I_PK = 7.5 A,
L = 10 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
I_S
2.5
A
E_AS
280 mJ
T_L
260 °C
THERMAL RESISTANCE RATINGS
Rating
Symbol Value Unit
Junction−to−Lead − Steady State
R_qJL
16 °C/W
Junction−to−Ambient − Steady State (Note 1)
R_qJA
80
Junction−to−Ambient − t v10 s (Note 1)
R_qJA
50
Junction−to−Ambient − Steady State (Note 2)
R_qJA
145
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area 1.127 in sq. [1 oz] including traces).
2. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq.).
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
6.0 mW @ 10 V
7.3 mW @ 4.5 V
I_D MAX
14.5 A
D
G
8
1
S
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM / PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4700N
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4700NR2
SO−8 2500/Tape & Reel
NTMS4700NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
NTMS4700N/D