NTMS4107NR2G Datasheet, PDF (1/6 Pages) ON Semiconductor – 30 V, 18 A, Single N−Channel, SO−8

NTMS4107N
Power MOSFET
30 V, 18 A, Single N−Channel, SO−8
Features
• Ultra Low R_DS(on) (at 4.5 V_GS), Low Gate Resistance and Low Q_G
• Optimized for Low Side Synchronous Applications
• High Speed Switching Capability
• Pb−Free Package is Available
Applications
• Notebook Computer Vcore Applications
• Network Applications
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
$20
V
Continuous Drain
Current (Note 1)
Steady ^{TA = 25°C}
I_D
State _{TA = 85°C}
15
A
11
t v10 s T_A = 25°C
18
Power Dissipation
(Note 1)
Steady
P_D
State _{TA = 25°C}
t v10 s
1.67
W
2.5
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
Steady T_A = 85°C
State
T_A = 25°C
P_D
11
A
8.0
0.93
W
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V_DD = 30 V, V_GS = 10 V, I_PK = 32 A,
L = 1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
56
A
T_J, T_stg −55 to 150 °C
I_S
3.0
A
E_AS
512
mJ
T_L
260
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1) R_qJA
75
°C/W
Junction−to−Ambient − t v 10 s (Note 1)
R_qJA
50
Junction−to−Ambient − Steady State (Note 2) R_qJA
135
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
3.4 mW @ 10 V
4.7 mW @ 4.5 V
I_D MAX
18 A
D
G
S
8
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
Source
Source
Gate
8
Drain
Drain
Drain
Drain
(Top View)
4107N = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMS4107NR2
SO−8 2500/Tape & Reel
NTMS4107NR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
NTMS4107N/D