NTMKE4890N Datasheet, PDF (1/6 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NTMKE4890N
Power MOSFET
30 V, 155 A, Single N−Channel, ICEPAK
Features
• Low Package Inductance
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
• Compatible with MX Footprint and Outline
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Optimized for both Synch FET
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
Power Dissipation R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20 V
T_A = 25°C
I_D
32
A
T_A = 70°C
25.5
T_A = 25°C
P_D
2.8 W
Continuous Drain
Current R_qJ−PCB
(Note 2)
Power Dissipation
R_qJ−PCB (Note 2)
Steady
State
T_A = 25°C
T_A = 70°C
T_A = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 70°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Current Limited by Package
T_A = 25°C
Operating Junction and Storage Temperature
I_D
155 A
86
P_D
65 W
I_D
192 A
154
P_D
100 W
I_DM
I_Dmax
T_J,
T_stg
244 A
50
A
−40 to °C
150
Source Current (Body Diode) (Note 1)
Drain to Source DV/DT
I_S
dV/dt
128 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
E_AS
505 mJ
(T_J = 25°C, V_DD = 30 V, V_GS = 10 V,
I_L = 58 A_pk, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
270 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Measured with a T_J of approximately 90°C using 1 oz Cu board.
3. Surfacemounted on FR4 board using 1 sq−in pad, 2 oz Cu.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
1.8 mW @ 10 V
2.5 mW @ 4.5 V
I_D MAX
155 A
ÍÍ
MARKING
DIAGRAM
ICEPAK
E PAD
CASE 145AB
E4890
AYWWG
G
E4890= Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
D
G
S
N−CHANNEL MOSFET
ORDERING INFORMATION
Device
Package
Shipping^†
NTMKE4890NT1G ICEPAK 1500/Tape & Reel
(Pb−Free)
NTMKE4890NT3G ICEPAK 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
January, 2011 − Rev. 4
Publication Order Number:
NTMKE4890N/D