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NTMFS4C290N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET | |||
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NTMFS4C290N
Power MOSFET
30 V, 46 A, Single NâChannel, SOâ8 FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
⢠CPU Power Delivery
⢠DCâDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
30
V
GateâtoâSource Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
VGS
ID
TA = 80°C
±20
V
15.0
A
11.2
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ⤠10 s
(Note 1)
TA = 25°C
PD
TA = 25°C
ID
TA = 80°C
2.49 W
22.5
A
16.8
Power Dissipation
TA = 25°C
PD
RqJA ⤠10 s (Note 1) Steady
Continuous Drain
State TA = 25°C
ID
Current RqJA
(Note 2)
TA = 80°C
5.6
W
8.2
A
6.2
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
PD
TC = 25°C
ID
TC =80°C
0.75 W
46
A
34
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
23.6 W
Pulsed Drain
Current
TA = 25°C, tp = 10 ms
IDM
132
A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
80
â55 to
+150
21
7.0
31
A
°C
A
V/ns
mJ
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 Apk, EAS = 14 mJ.
www.onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
6.95 mW @ 10 V
10.8 mW @ 4.5 V
D (5â8)
ID MAX
46 A
G (4)
S (1,2,3)
NâCHANNEL MOSFET
MARKING
DIAGRAMS
D
SOâ8 FLAT LEAD
CASE 488AA
S
S
STYLE 1
S
4C290
AYWZZ
D
G
D
1
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
Package
NTMFS4C290NT1G SOâ8 FL
(PbâFree)
Shippingâ
1500 /
Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
January, 2016 â Rev. 1
Publication Order Number:
NTMFS4C290N/D
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