NTMFS4C250N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTMFS4C250N
Power MOSFET
30 V, 69 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
V_DSS
30
V
T_A = 25°C
V_GS
I_D
±20
V
20.0
A
T_A = 80°C
14.9
T_A = 25°C
P_D
2.55 W
T_A = 25°C
I_D
T_A = 80°C
31.6
A
23.7
Power Dissipation
T_A = 25°C
P_D
R_qJA ≤ 10 s (Note 1) _Steady
Continuous Drain
State _{TA = 25°C}
I_D
Current R_qJA
(Note 2)
T_A = 80°C
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
P_D
Continuous Drain
Current R_qJC
(Note 1)
T_C = 25°C
I_D
T_C =80°C
6.4
W
11
A
8.2
0.77 W
69
A
52
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
Pulsed Drain
Current
T_A = 25°C, t_p = 10 ms
I_DM
30.5 W
166
A
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
I_Dmax
T_J,
T_STG
I_S
dV/dt
80
−55 to
+150
28
7.0
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_GS = 10 V, I_L =37 A_pk,
L = 0.1 mH, R_GS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
E_AS
68
mJ
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at T_J = 25°C, V_GS = 10 V, I_L = 27 A_pk, EAS = 36 mJ.
www.onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
4.0 mW @ 10 V
6.0 mW @ 4.5 V
D (5−8)
I_D MAX
69 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
SO−8 FLAT LEAD
CASE 488AA
S
S
STYLE 1
S
4C250
AYWZZ
D
G
D
1
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
Package
NTMFS4C250NT1G SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
January, 2016 − Rev. 1
Publication Order Number:
NTMFS4C250N/D