|
NTMFS4C13NT1G Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL | |||
|
NTMFS4C13N
Power MOSFET
30 V, 38 A, Single NâChannel, SOâ8 FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
⢠CPU Power Delivery
⢠DCâDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ⤠10 s
(Note 1)
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA ⤠10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
TC = 25°C
TC =80°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 21 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
30
V
±20
V
13.0
A
9.7
2.46 W
19.1
A
14.3
5.32 W
7.2
A
5.4
0.75 W
38
A
29
21.6 W
106
70
â55 to
+150
19
7.0
22
A
A
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 15 Apk, EAS = 11 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.1 mW @ 10 V
13.8 mW @ 4.5 V
D (5â8)
ID MAX
38 A
G (4)
S (1,2,3)
NâCHANNEL MOSFET
MARKING
DIAGRAM
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
D
S 4C13N
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C13NT1G
Package
SOâ8 FL
(PbâFree)
Shippingâ
1500 /
Tape & Reel
NTMFS4C13NT3G SOâ8 FL
(PbâFree)
5000 /
Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
November, 2013 â Rev. 2
Publication Order Number:
NTMFS4C13N/D
|
▷ |