NTMFS4C10NT1G Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 46 A, Single N−Channel, SO−8 FL

NTMFS4C10N
Power MOSFET
30 V, 46 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
I_D
15.0
A
T_A = 80°C
11.2
Power Dissipation
R_qJA (Note 1)
T_A = 25°C
P_D
2.49 W
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
I_D
T_A = 80°C
22.5
A
16.8
Power Dissipation
T_A = 25°C
P_D
R_qJA ≤ 10 s (Note 1) _Steady
Continuous Drain
State _{TA = 25°C}
I_D
Current R_qJA
(Note 2)
T_A = 80°C
5.6
W
8.2
A
6.2
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_A = 25°C
P_D
T_C = 25°C
I_D
T_C =80°C
0.75 W
46
A
34
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
Pulsed Drain
Current
T_A = 25°C, t_p = 10 ms
I_DM
23.6 W
132
A
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_GS = 10 V, I_L = 25 A_pk,
L = 0.1 mH, R_GS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_Dmax
T_J,
T_STG
I_S
dV/d_t
E_AS
80
−55 to
+150
21
7.0
31
A
°C
A
V/ns
mJ
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at T_J = 25°C,
V_GS = 10 V, I_L = 17 Apk, E_AS = 14 mJ.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
6.95 mW @ 10 V
10.8 mW @ 4.5 V
D (5−8)
I_D MAX
46 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4C10N
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
Package
Shipping^†
NTMFS4C10NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C10NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 3
Publication Order Number:
NTMFS4C10N/D