NTMFS4C032N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTMFS4C032N
Power MOSFET
30 V, 38 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
T_A = 25°C
T_A = 80°C
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
T_A = 25°C
T_A = 80°C
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA
(Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 80°C
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_A = 25°C
T_C = 25°C
T_C =80°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_GS = 10 V, I_L = 21 A_pk,
L = 0.1 mH, R_GS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_D
P_D
I_D
P_D
I_DM
I_Dmax
T_J,
T_STG
I_S
dV/d_t
E_AS
T_L
30
V
±20
V
13.0
A
9.7
2.46 W
19.1
A
14.3
5.32 W
7.2
A
5.4
0.75 W
38
A
29
21.6 W
106
70
−55 to
+150
19
7.0
22
A
A
°C
A
V/ns
mJ
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at T_J = 25°C,
V_GS = 10 V, I_L = 15 Apk, E_AS = 11 mJ.
www.onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
7.35 mW @ 10 V
11.15 mW @ 4.5 V
D (5−8)
I_D MAX
38 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
D
S 4C032
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C032NT1G
Package
SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4C032NT3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
August, 2016 − Rev. 1
Publication Order Number:
NTMFS4C032N/D