NTMFS4982NF Datasheet, PDF (1/7 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NTMFS4982NF
Power MOSFET
30 V, 207 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Server, Netcom, POL
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• High Performance Applications
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
I_D
36
A
T_A = 85°C
26
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA v
10 sec
T_A = 25°C
P_D
T_A = 25°C
I_D
T_A = 85°C
2.7
W
60
A
43
Power Dissipation
R_qJA, t v 10 sec
Continuous Drain
Current R_qJA
(Note 2)
T_A = 25°C
P_D
Steady
State _{TA = 25°C}
I_D
T_A = 85°C
7.4
W
26.5
A
19
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_A = 25°C
P_D
T_C = 25°C
I_D
T_C = 85°C
1.5
W
207
A
149
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current t_p=10ms T_A = 25°C
Current limited by package
T_A = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
P_D
I_DM
I_Dmaxpkg
T_J,
T_STG
I_S
dV/dt
89.3
350
100
−55 to
+150
54
6
W
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V_DD = 50 V, V_GS = 10 V, I_L = 50 A_pk,
L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T_L
125 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
1.3 mW @ 10 V
1.9 mW @ 4.5 V
I_D MAX
207 A
N−CHANNEL MOSFET
D (5, 6)
G
(4)
S (1, 2, 3)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4982NF
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4982NFT1G
Package
SO−8FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4982NFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
February, 2014 − Rev. 3
Publication Order Number:
NTMFS4982NF/D