NTMFS4943N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 41 A, Single N−Channel, SO−8 FL

NTMFS4943N
Power MOSFET
30 V, 41 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
I_D
14
A
T_A = 100°C
8.7
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA ≤
10 s (Note 1)
T_A = 25°C
P_D
T_A = 25°C
I_D
T_A = 100°C
2.6
W
23
A
14.3
Power Dissipation
T_A = 25°C
P_D
R_qJA ≤ 10 s
(Note 1)
Steady
State
Continuous Drain
T_A = 25°C
I_D
Current R_qJA
(Note 2)
T_A = 100°C
6.83
W
8.3
A
5.2
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_A = 25°C
P_D
T_C = 25°C
I_D
T_C = 85°C
0.91
W
41
A
26
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
22.3
W
Pulsed Drain
Current
T_A = 25°C, t_p = 10 ms
I_DM
125
A
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy T_J = 25°C, V_DD = 30 V, V_GS = 10 V,
I_L = 25 A_pk, L = 0.1 mH, R_G = 25 W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_Dmax
T_J,
T_STG
I_S
dV/d_t
E_AS
T_L
100
−55 to
+150
20
8.0
31
A
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
7.2 mW @ 10 V
11 mW @ 4.5 V
D (5,6)
I_D MAX
41 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
D
S ^4943N
S ^AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4943NT1G
Package
SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4943NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
September, 2009 − Rev. 1
Publication Order Number:
NTMFS4943N/D