NTMFS4936N_12 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTMFS4936N,
NTMFS4936NC
Power MOSFET
30 V, 79 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on), Low Capacitance and Optimized Gate Charge to
Minimize Conduction, Driver and Switching Losses
• Next Generation Enhanced Body Diode, Engineered for Soft
Recovery, Provides Schottky−Like Performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
T_A = 25°C
T_A = 100°C
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
T_A = 25°C
T_A = 100°C
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA
(Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 100°C
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_A = 25°C
T_C = 25°C
T_C =100°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed DrainCurrent T_A = 25°C, t_p = 10 ms
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 44 A_pk, L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_D
P_D
I_D
P_D
I_DM
I_Dmax
T_J,
T_STG
I_S
dV/d_t
E_AS
T_L
30
V
±20
V
19.5
A
12.3
2.62 W
35
A
22
8.4
W
11.6
A
7.3
0.92 W
79
A
50
43
W
235
100
−55 to
+150
39.2
6.0
96.8
A
A
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
3.8 mW @ 10 V
4.8 mW @ 4.5 V
D (5,6)
I_D MAX
79 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S ^4936N
S ^AYWZZ
G
D
D
4936N
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4936NT1G
Package
SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4936NT3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NTMFS4936NCT1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NTMFS4936NCT3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
June, 2012 − Rev. 9
Publication Order Number:
NTMFS4936N/D