NTMFS4933N Datasheet, PDF (1/7 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NTMFS4933N
Power MOSFET
30 V, 210 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Improve Conduction and Overall Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• OR−ing FET, Power Load Switch, Motor Control
• Refer to Application Note AND8195/D for Mounting Information
End Products
• Server, UPS, Fault−Tolerant Power Systems, Hot Swap
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
I_D
34
A
T_A = 100°C
21.5
Power Dissipation
R_qJA (Note 1)
T_A = 25°C
P_D
2.74 W
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
I_D
T_A = 100°C
43
A
27
Power Dissipation
T_A = 25°C
P_D
R_qJA ≤ 10 s (Note 1) _Steady
Continuous Drain
State _{TA = 25°C}
I_D
Current R_qJA
(Note 2)
T_A = 100°C
7.3
W
20
A
12.5
Power Dissipation
R_qJA (Note 2)
T_A = 25°C
P_D
1.06 W
Continuous Drain
Current R_qJC
(Note 1)
T_C = 25°C
I_D
T_C =100°C
210
A
132
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
Pulsed Drain
Current
T_A = 25°C, t_p = 10 ms
I_DM
104
W
400
A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 24 V, V_GS = 10 V,
I_L = 58 A_pk, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_J,
T_STG
I_S
dV/d_t
E_AS
−55 to
+150
95
4.4
504
°C
A
V/ns
mJ
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm² [1 oz])
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
1.2 mW @ 10 V
2.0 mW @ 4.5 V
D (5,6)
I_D MAX
210 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
D
S ^4933N
S ^AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4933NT1G
Package
SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4933NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 8
Publication Order Number:
NTMFS4933N/D