NTMFS4931N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 246 A, Single N.Channel, SO.8 FL

NTMFS4931N
Power MOSFET
30 V, 246 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Improve Conduction and Overall Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• OR−ing FET, Power Load Switch, Motor Control
• Refer to Application Note AND8195/D for Mounting Information
End Products
• Motor Control, UPS, Fault−Tolerant Power Systems, Hot Swap
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
T_A = 25°C
T_A = 100°C
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
T_A = 25°C
T_A = 100°C
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA
(Note 2)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 100°C
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_A = 25°C
T_C = 25°C
T_C =100°C
Power Dissipation
R_qJC (Note 1)
Pulsed Drain
Current
T_C = 25°C
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 24 V, V_GS = 10 V,
I_L = 41 A_pk, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_D
P_D
I_D
P_D
I_DM
T_J,
T_STG
I_S
dV/d_t
E_AS
T_L
30
V
±20
V
40
A
25
2.74 W
77
A
48
10.2 W
23
A
15
0.95 W
246
A
156
104
W
490
A
−55 to
+150
100
4.4
252
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
1.1 mW @ 10 V
1.5 mW @ 4.5 V
D (5,6)
I_D MAX
246 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
D
S ^4931N
S ^AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4931NT1G
Package
SO−8 FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4931NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 0
Publication Order Number:
NTMFS4931N/D