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NTMFS4926N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL | |||
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NTMFS4926N
Power MOSFET
30 V, 44 A, Single NâChannel, SOâ8 FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠Optimized for 5 V, 12 V Gate Drives
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
⢠CPU Power Delivery
⢠DCâDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
15.5
A
TA = 100°C
9.8
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ⤠10 s
(Note 1)
TA = 25°C
PD
TA = 25°C
ID
TA = 100°C
2.70 W
23.4
A
14.8
Power Dissipation
TA = 25°C
PD
RqJA ⤠10 s (Note 1) Steady
Continuous Drain
State TA = 25°C
ID
Current RqJA
(Note 2)
TA = 100°C
6.13 W
9.0
A
5.7
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
PD
TC = 25°C
ID
TC =100°C
0.92 W
44
A
28
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
21.6 W
Pulsed Drain
Current
TA = 25°C, tp = 10 ms
IDM
182
A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 21 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
â55 to
+150
21
6.0
22
A
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
7.0 mW @ 10 V
11.2 mW @ 4.5 V
D (5,6)
ID MAX
44 A
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4926N
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4926NT1G
Package
SOâ8 FL
(PbâFree)
Shippingâ
1500 /
Tape & Reel
NTMFS4926NT3G SOâ8 FL
(PbâFree)
5000 /
Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 â Rev. 5
Publication Order Number:
NTMFS4926N/D
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