|
NTMFS4852N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 155 A, Single N−Channel, SO−8 FL | |||
|
NTMFS4852N
Advance Information
Power MOSFET
30 V, 155 A, Single NâChannel, SOâ8 FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These are PbâFree Device
Applications
⢠Refer to Application Note AND8195/D
⢠CPU Power Delivery
⢠DCâDC Converters
⢠Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA v
10 sec
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
Current RqJA
(Note 2)
Steady
State
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
TC = 25°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
30
V
±20
V
25
A
18
2.31
W
40
A
29
5.95
W
16
A
11
0.90
W
155
A
112
86.2
W
310
A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DrainâtoâSource Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 49 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â from case for 10 s)
IDmaxpkg
TJ,
TSTG
IS
dV/dt
EAS
TL
100
â55 to
+150
72
6
360
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.1 mW @ 10 V
3.1 mW @ 4.5 V
ID MAX
155 A
D (5,6)
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4852N
S AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTMFS4852NT1G SOâ8FL
1500 /
(PbâFree) Tape & Reel
NTMFS4852NT3G SOâ8FL
(PbâFree)
5000 /
Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbâFree strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
1
July, 2009 â Rev. P1
Publication Order Number:
NTMFS4852N/D
|
▷ |