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NTMFS4839NH Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL | |||
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NTMFS4839NH
Power MOSFET
30 V, 64 A, Single NâChannel, SOâ8FL
Features
⢠Low RDS(ON) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠Low RG
⢠These are PbâFree Devices*
Applications
⢠Refer to Application Note AND8195/D
⢠CPU Power Delivery
⢠DCâDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
TA = 85°C
15
A
11
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA â
tv10 sec
TA = 25°C
PD
2.17
W
TA = 85°C
1.13
TA = 25°C
ID
TA = 85°C
24
A
17
Power Dissipation
TA = 25°C
PD
RqJA tv10 sec
Steady TA = 85°C
Continuous Drain
State TA = 25°C
ID
Current RqJA
TA = 85°C
(Note 2)
5.7
W
2.9
9.5
A
7.0
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
PD
TA = 85°C
TC = 25°C
ID
TC = 85°C
0.87
W
0.45
64
A
46
Power Dissipation
RqJC (Note 1)
TC = 25°C
TC = 25°C
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 27 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â from case for 10 s)
PD
IDM
TJ,
TSTG
IS
dV/dt
EAS
TL
42.4
W
22
192
A
â55 to
+150
35
6
109
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.5 mW @ 10 V
10.3 mW @ 4.5 V
ID MAX
64 A
D (5,6)
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4839NH
S AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4839NHT1G
Package
SOâ8FL
(PbâFree)
Shippingâ
1500 /
Tape & Reel
NTMFS4839NHT3G SOâ8FL
5000 /
(PbâFree) Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
May, 2010 â Rev. 4
Publication Order Number:
NTMFS4839NH/D
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