NTMFS4839N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL

NTMFS4839N
Power MOSFET
30 V, 66 A, Single N−Channel, SO−8FL
Features
• Low R_DS(ON) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices*
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
I_D
15
A
T_A = 85°C
11
Power Dissipation
R_qJA (Note 1)
T_A = 25°C
P_D
2.17
W
Continuous Drain
T_A = 25°C
ID
9.5
A
Current R_qJA
(Note 2)
Steady TA = 85°C
7.0
State
Power Dissipation
T_A = 25°C
P_D
0.87
W
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_C = 25°C
I_D
T_C = 85°C
66
A
48
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
41.7
W
Pulsed Drain
Current
T_A = 25°C,
t_p = 10 ms
I_DM
132
A
Operating Junction and Storage
Temperature
T_J,
−55 to °C
T_STG
+150
Source Current (Body Diode)
Drain to Source DV/DT
I_S
dV/dt
35
A
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy T_J = 25°C, V_DD = 30 V, V_GS = 10 V,
I_L = 19 A_pk, L = 1.0 mH, R_G = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
180.5 mJ
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
May, 2010 − Rev. 4
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
5.5 mW @ 10 V
9.5 mW @ 4.5 V
I_D MAX
66 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S ^4839N
S ^AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4839NT1G
Package
SO−8FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4839NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4839N/D