NTMFS4835N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL

NTMFS4835N
Power MOSFET
30 V, 104 A, Single N−Channel, SO−8FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices*
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
T_A = 25°C
T_A = 85°C
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA
(Note 2)
Power Dissipation
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
Steady
State
T_A = 25°C
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain
Current
T_A = 25°C,
t_p = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 28 A_pk, L = 1.0 mH, R_G = 25 W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_D
P_D
I_DM
T_J,
T_STG
I_S
d_V/d_t
E_AS
30
V
±20
V
20
A
14
2.27
W
12
A
9.0
0.89
W
104
A
75
62.5
W
208
A
−55 to
+150
52
6
392
°C
A
V/ns
mJ
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
3.5 mW @ 10 V
5.0 mW @ 4.5 V
D (5,6)
I_D MAX
104 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
D
S ^4835N
S ^AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4835NT1G
Package
SO−8FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NTMFS4835NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
May, 2010 − Rev. 6
Publication Order Number:
NTMFS4835N/D