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NTMFS4834N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL | |||
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NTMFS4834N
Power MOSFET
30 V, 130 A, Single NâChannel, SOâ8FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These are PbâFree Devices*
Applications
⢠Refer to Application Note AND8195/D
⢠CPU Power Delivery
⢠DCâDC Converters
⢠Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 32 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â from case for 10 s)
Symbol
VDSS
VGS
ID
PD
Value
30
±20
21
15
2.31
ID
13
9.5
PD
0.9
ID
130
93
PD
86.2
IDM
260
TJ, TSTG
IS
dV/dt
EAS
â55 to
+150
71
6
512
TL
260
Unit
V
V
A
W
A
W
A
W
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.0 mW @ 10 V
4.0 mW @ 4.5 V
ID MAX
130 A
D (5,6)
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4834N
S AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTMFS4834NT1G SOâ8FL 1500 Tape / Reel
(PbâFree)
NTMFS4834NT3G SOâ8FL 5000 Tape / Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
May, 2010 â Rev. 5
Publication Order Number:
NTMFS4834N/D
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