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NTMFS4833N_14 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30V 191A Single N-Channel, SO-8FL
NTMFS4833N
Power MOSFET
30 V, 191 A, Single N−Channel, SO−8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
ID
TA = 85°C
28
A
20.5
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.7
W
Continuous Drain
TA = 25°C
ID
Current RqJA
(Note 2)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
PD
RqJA (Note 2)
16
A
12
1.1
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
TC = 85°C
191
A
138
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
113.6 W
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
IDM
288
A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to °C
+150
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
104
A
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 35 Apk, L = 1.0 mH, RG = 25 W)
EAS
612.5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm2 [1 oz])
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.0 mW @ 10 V
3.0 mW @ 4.5 V
D (5)
ID MAX
191 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4833N
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4833NT1G SO−8FL 1500/Tape & Reel
(Pb−Free)
NTMFS4833NT3G SO−8FL 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
March, 2014 − Rev. 10
Publication Order Number:
NTMFS4833N/D