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NTMFS4833N_14 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30V 191A Single N-Channel, SO-8FL | |||
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NTMFS4833N
Power MOSFET
30 V, 191 A, Single NâChannel, SOâ8FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠These are PbâFree Devices
Applications
⢠Refer to Application Note AND8195/D
⢠CPU Power Delivery
⢠DCâDC Converters
⢠Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
30
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
ID
TA = 85°C
28
A
20.5
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.7
W
Continuous Drain
TA = 25°C
ID
Current RqJA
(Note 2)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
PD
RqJA (Note 2)
16
A
12
1.1
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
TC = 85°C
191
A
138
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
113.6 W
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
IDM
288
A
Operating Junction and Storage
Temperature
TJ, TSTG â55 to °C
+150
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
104
A
6
V/ns
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 35 Apk, L = 1.0 mH, RG = 25 W)
EAS
612.5 mJ
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm2 [1 oz])
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.0 mW @ 10 V
3.0 mW @ 4.5 V
D (5)
ID MAX
191 A
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 4833N
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shippingâ
NTMFS4833NT1G SOâ8FL 1500/Tape & Reel
(PbâFree)
NTMFS4833NT3G SOâ8FL 5000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
March, 2014 â Rev. 10
Publication Order Number:
NTMFS4833N/D
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