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NTMFS4122N Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
NTMFS4122N
Power MOSFET
30 V, 23 A, Single N-Channel,
SO-8 Flat Lead
Features
•ăLow RDS(on)
•ăLow Inductance SO-8 Package
•ăThis is a Pb-Free Device
Applications
•ăNotebooks, Graphics Cards
•ăDC-DC Converters
•ăSynchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
$20
V
Continuous Drain Current Steady TA = 25°C
ID
(Note 1 )
State TA = 85°C
t v10 s TA = 25°C
14
A
10
23
Power Dissipation (Note 1) Steady
PD
State TA = 25°C
t v10 s
2.2 W
5.8
Continuous Drain Current
TA = 25°C
ID
(Note 2)
Steady
State
TA = 85°C
Power Dissipation (Note 2)
TA = 25°C PD
9.1
A
6.5
0.9 W
Pulsed Drain Current
tp = 10 ms
IDM
68
A
Operating Junction and Storage Temperature
TJ, Tstg -55 to °C
150
Source Current (Body Diode)
IS
Single Pulse Drain-to-Source Avalanche Energy EAS
(VDD = 30 V, VGS = 10 V, IPK = 21 A, L = 1 mH,
RG = 25 W)
Lead Temperature for Soldering Purposes
TL
(1/8″ from case for 10 s)
7.0
A
220 mJ
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction-to-Ambient - Steady State (Note 1)
RqJA 56.3 °C/W
Junction-to-Ambient - t v10 s (Note 1)
RqJA
21.5
Junction-to-Ambient - Steady State (Note 2)
RqJA 141.6
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0264 in sq).
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
4.6 mW @ 10 V
6.3 mW @ 4.5 V
ID MAX
(Note 1)
23 A
D
G
S
MARKING
DIAGRAM
1
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
D
S 4122N
S AYWWG
G
G
D
D
4122N = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4122NT1G SO-8 FL 1500 Tape & Reel
(Pb-Free)
NTMFS4122NT3G SO-8 FL 5000 Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 4
Publication Order Number:
NTMFS4122N/D