NTMFS4108N Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package

NTMFS4108N
Power MOSFET
30 V, 35 A, Single N-Channel,
SO-8 Flat Lead Package
Features
•ăThermally and Electrically Enhanced Packaging Compatible with
Standard SO-8 Package Footprint
•ăNew Package Provides Capability of Inspection and Probe After
Board Mounting
•ăUltra Low R_DS(on) (at 4.5 V_GS), Low Gate Resistance and Low Q_G
•ăOptimized for Low Side Synchronous Applications
•ăHigh Speed Switching Capability
Applications
•ăNotebook Computer Vcore Applications
•ăNetwork Applications
•ăDC-DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
V_DSS
30
V
Gate-to-Source Voltage
V_GS
$20 V
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
22
A
16
t v10 s T_A = 25°C
35
Power Dissipation
(Note 1)
Steady
P_D
State _{TA = 25°C}
t v10 s
2.4
W
6.25
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
T_A = 85°C
Steady
State ^TA ^{= 25°C}
P_D
13.5 A
10
0.91 W
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
100 W
Pulsed Drain Current
t_p = 10 ms
I_DM
203
A
Operating Junction and Storage Temperature
T_J, T_stg -55 to °C
150
Continuous Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche
Energy (V_DD = 30 V, V_GS = 10 V, I_PK = 30 A,
L = 1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
6.0
A
E_AS
450 mJ
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).
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http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
1.8 mW @ 10 V
2.7 mW @ 4.5 V
I_D MAX
35 A
D
G
S
1
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S ^4108N
S ^AYWWG
G
G
D
D
4108N = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMFS4108NT1G SO-8 FL 1500 Tape / Reel
(Pb-Free)
NTMFS4108NT3G SO-8 FL 5000 Tape / Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 5
Publication Order Number:
NTMFS4108N/D