NTMFD4C86N Datasheet, PDF (1/12 Pages) ON Semiconductor – Dual N-Channel SO8FL

NTMFD4C86N
PowerPhase, Dual
N-Channel SO8FL
30 V, High Side 20 A / Low Side 32 A
Features
• Co−Packaged Power Stage Solution to Minimize Board Space
• Minimized Parasitic Inductances
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• System Voltage Rails
• Point of Load
www.onsemi.com
V_(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
R_DS(on) MAX
5.4 mW @ 10 V
8.1 mW @ 4.5 V
2.6 mW @ 10 V
3.4 mW @ 4.5 V
I_D MAX
20 A
32 A
D1 (3, 4, 9)
Figure 1. Typical Application Circuit
100
95
90
85
80
V_IN = 12 V
V_OUT = 1.2 V
75
V_GS = 5 V
F_SW = 300 kHz
70
T_A = 25°C
0
5
10
15
20
25
LOAD CURRENT (A)
Figure 2. Typical Efficiency Performance
POWERPHASEGEVB Evaluation Board
© Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 1
(1) G1
(2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
PIN CONNECTIONS
D1 4
D1 3 9 10
D1 S2
S1 2
G1 1
5 SW
6 SW
7 SW
8 G2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
4C86N
CASE 506CR
AYWZZ
1
4C86N = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
Publication Order Number:
NTMFD4C86N/D